NSN 5961-01-247-1231 of Transistor - Parts Details
Alternative NSN: 5961012471231 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 012471231 |
NCB Code: USA (01) |
Manufacturers: Intersil Corporation , International Rectifier Corporation , Thales Avionics , Hewlett Packard Co , Telerad Mfg Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers IRF9140, IFR9130, A1231898, 1RF9130, 1855-0484 under NSN 5961-01-247-1231 of Transistor manufactured by Intersil Corporation, International Rectifier Corporation, Thales Avionics, Hewlett Packard Co, Telerad Mfg Corp.
Federal Supply Class of NSN 5961-01-247-1231 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-247-1231, 5961012471231
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Part No Manufacturer Item Name QTY RFQ IRF9140 Intersil Corporation transistor Avl RFQ IRF9140 International Rectifier Corporation transistor Avl RFQ IFR9130 International Rectifier Corporation transistor Avl RFQ A1231898 Thales Avionics transistor Avl RFQ 1RF9130 International Rectifier Corporation transistor Avl RFQ 1855-0484 Hewlett Packard Co transistor Avl RFQ 1200151 Telerad Mfg Corp transistor Avl RFQ
Characteristics Data of NSN 5961012471231MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 1.573 INCHES MAXIMUM ABKW OVERALL HEIGHT 0.310 INCHES MAXIMUM ABMK OVERALL WIDTH 1.050 INCHES MAXIMUM AGAV III END ITEM IDENTIFICATION 4935-01-108-0442 N TEST SET AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION FIELD EFFECT-DUAL GATE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION T0-3 AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC -19.00 AMPERES MAXIMUM DRAIN CURRENT AND -76.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK CTRD POWER RATING PER CHARACTERISTIC 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 PIN AND 1 CASE
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM |
ABKW | OVERALL HEIGHT | 0.310 INCHES MAXIMUM |
ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
AGAV | III END ITEM IDENTIFICATION | 4935-01-108-0442 N TEST SET |
AKPV | MOUNTING FACILITY QUANTITY | 2 |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-3 |
AXGY | MOUNTING METHOD | UNTHREADED HOLE |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -100.0 MAXIMUM DRAIN TO GATE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | -19.00 AMPERES MAXIMUM DRAIN CURRENT AND -76.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK |
CTRD | POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |