NSN 5961-01-249-7094 of Transistor - Parts Details
| Alternative NSN: 5961012497094 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012497094 |
| NCB Code: USA (01) |
| Manufacturers: Siemens Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers BUZ45A under NSN 5961-01-249-7094 of Transistor manufactured by Siemens Corp.
Federal Supply Class of NSN 5961-01-249-7094 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-249-7094, 5961012497094
Characteristics Data of NSN 5961012497094MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 1.573 INCHES MAXIMUM ABKW OVERALL HEIGHT 0.450 INCHES MAXIMUM ABMK OVERALL WIDTH 1.050 INCHES MAXIMUM AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION FIELD EFFECT ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION TO-3 AXGY MOUNTING METHOD UNTHREADED HOLE CBBL FEATURES PROVIDED HERMETICALLY SEALED CASE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 9.60 AMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 PIN AND 1 CASE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| ABKW | OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| ABMK | OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 9.60 AMPERES MAXIMUM DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |