NSN 5961-01-280-1055 of Transistor - Parts Details
| Alternative NSN: 5961012801055 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 012801055 |
| NCB Code: USA (01) |
| Manufacturers: Nokia Siemens Networks Gmbh And Co , Siliconix Incorporated Div Silic , Raytheon Aircraft , Gdi Inc , Semelab Limited , Texas Instrument Inc , International Rectifier Corporation , Sapa Operaciones Sl |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers V22916-X2-A169, V10078, 723041-2, 49126, 2N6756 under NSN 5961-01-280-1055 of Transistor manufactured by Nokia Siemens Networks Gmbh And Co, Siliconix Incorporated Div Silic, Raytheon Aircraft, Gdi Inc, Semelab Limited.
Federal Supply Class of NSN 5961-01-280-1055 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-280-1055, 5961012801055
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Part No Manufacturer Item Name QTY RFQ V22916-X2-A169 Nokia Siemens Networks Gmbh And Co transistor Avl RFQ V10078 Siliconix Incorporated Div Silic transistor Avl RFQ 723041-2 Raytheon Aircraft transistor Avl RFQ 49126 Gdi Inc transistor Avl RFQ 2N6756 Semelab Limited transistor Avl RFQ 2N6756 Texas Instrument Inc transistor Avl RFQ 2N6756 International Rectifier Corporation transistor Avl RFQ 27033100430 Sapa Operaciones Sl transistor Avl RFQ
Characteristics Data of NSN 5961012801055MRC Criteria Characteristic AKPV MOUNTING FACILITY QUANTITY 2 ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD UNTHREADED HOLE CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC 14.00 AMPERES NOMINAL DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION TTQY TERMINAL TYPE AND QUANTITY 2 PIN
| MRC | Criteria | Characteristic |
|---|---|---|
| AKPV | MOUNTING FACILITY QUANTITY | 2 |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | UNTHREADED HOLE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 14.00 AMPERES NOMINAL DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 PIN |