NSN 5961-01-304-1961 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961013041961 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013041961 |
| NCB Code: USA (01) |
| Manufacturers: Microsemi Corporation , Kato Engineering Inc , Inspektorat Wsparcia Sil Zbrojnych |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers R-42160, 850-40923-82, 5961PL0645424, 099-00131-03 ITEM 82 under NSN 5961-01-304-1961 of Semiconductor Device Diode manufactured by Microsemi Corporation, Kato Engineering Inc, Inspektorat Wsparcia Sil Zbrojnych.
Federal Supply Class of NSN 5961-01-304-1961 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-304-1961, 5961013041961
-
Part No Manufacturer Item Name QTY RFQ R-42160 Microsemi Corporation semiconductor device diode Avl RFQ 850-40923-82 Kato Engineering Inc semiconductor device diode Avl RFQ 5961PL0645424 Inspektorat Wsparcia Sil Zbrojnych semiconductor device diode Avl RFQ 099-00131-03 ITEM 82 Kato Engineering Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961013041961MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 5.375 INCHES MINIMUM AND 5.855 INCHES MAXIMUM AFZC FUNCTION FOR WHICH DESIGNED RECTIFIER ALBA ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE AXGY MOUNTING METHOD THREADED STUD CBBL FEATURES PROVIDED REVERSE POLARITY CQJX NOMINAL THREAD SIZE 0.375 INCHES CTQX CURRENT RATING PER CHARACTERISTIC 125.00 AMPERES COLLECTOR CURRENT, DC MAXIMUM THSD THREAD SERIES DESIGNATOR UNF TTQY TERMINAL TYPE AND QUANTITY 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG AKPV MOUNTING FACILITY QUANTITY 1 CTMZ SEMICONDUCTOR MATERIAL SILICON CCDG OVERALL WIDTH ACROSS FLATS 1.050 INCHES MINIMUM AND 1.060 INCHES MAXIMUM CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 5.375 INCHES MINIMUM AND 5.855 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | RECTIFIER |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
| AXGY | MOUNTING METHOD | THREADED STUD |
| CBBL | FEATURES PROVIDED | REVERSE POLARITY |
| CQJX | NOMINAL THREAD SIZE | 0.375 INCHES |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 125.00 AMPERES COLLECTOR CURRENT, DC MAXIMUM |
| THSD | THREAD SERIES DESIGNATOR | UNF |
| TTQY | TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG |
| AKPV | MOUNTING FACILITY QUANTITY | 1 |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CCDG | OVERALL WIDTH ACROSS FLATS | 1.050 INCHES MINIMUM AND 1.060 INCHES MAXIMUM |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE |