NSN 5961-01-313-1429 of Transistor - Parts Details
| Alternative NSN: 5961013131429 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013131429 |
| NCB Code: USA (01) |
| Manufacturers: Csr Industries Inc , Freescale Semiconductor Inc , Intersil Corporation , Space Power Electronics Inc , Harris Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2N4351 under NSN 5961-01-313-1429 of Transistor manufactured by Csr Industries Inc, Freescale Semiconductor Inc, Intersil Corporation, Space Power Electronics Inc, Harris Corporation.
Federal Supply Class of NSN 5961-01-313-1429 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-313-1429, 5961013131429
Characteristics Data of NSN 5961013131429MRC Criteria Characteristic ABBH INCLOSURE MATERIAL METAL ABHP OVERALL LENGTH 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ABJT TERMINAL LENGTH 1.000 INCHES NOMINAL ADAV OVERALL DIAMETER 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED ELECTROSTATIC SENSITIVE CRTL CRITICALITY CODE JUSTIFICATION CBBL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 200.0 DEG CELSIUS JUNCTION TEST TEST DATA DOCUMENT 26916-019-005539 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D TTQY TERMINAL TYPE AND QUANTITY 4 UNINSULATED WIRE LEAD CTQX CURRENT RATING PER CHARACTERISTIC 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES NOMINAL |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
| CRTL | CRITICALITY CODE JUSTIFICATION | CBBL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| TEST | TEST DATA DOCUMENT | 26916-019-005539 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING D |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |