NSN 5961-01-333-2230 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961013332230 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013332230 |
| NCB Code: USA (01) |
| Manufacturers: Micro Uspd Inc , Semtech Corporation , Rsm Electron Power Inc , Rockwell Collins Inc , Optek Technology Inc , Scientific Radio Systems Inc , Crane Electronics Inc , Raytheon Aircraft , Avago Technologies Us Inc Division , Hewlett Packard Co , Ge Aviation Systems Llc , Tdk Lambda Americas Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers UTG4180, UTG4111, UTG4047, UTG-4064, UTG-4028 under NSN 5961-01-333-2230 of Semiconductor Device Diode manufactured by Micro Uspd Inc, Semtech Corporation, Rsm Electron Power Inc, Rockwell Collins Inc, Optek Technology Inc.
Federal Supply Class of NSN 5961-01-333-2230 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-333-2230, 5961013332230
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Part No Manufacturer Item Name QTY RFQ UTG4180 Micro Uspd Inc semiconductor device diode Avl RFQ UTG4111 Micro Uspd Inc semiconductor device diode Avl RFQ UTG4047 Micro Uspd Inc semiconductor device diode Avl RFQ UTG-4064 Micro Uspd Inc semiconductor device diode Avl RFQ UTG-4028 Micro Uspd Inc semiconductor device diode Avl RFQ UES1306HR2 Micro Uspd Inc semiconductor device diode Avl RFQ UES1306 Micro Uspd Inc semiconductor device diode Avl RFQ UES1305 Micro Uspd Inc semiconductor device diode Avl RFQ SS7691 Semtech Corporation semiconductor device diode Avl RFQ SEN-R-373-4 Rsm Electron Power Inc semiconductor device diode Avl RFQ SEN-R-347 Rsm Electron Power Inc semiconductor device diode Avl RFQ S340S7 Rsm Electron Power Inc semiconductor device diode Avl RFQ RC353-2074-012 Rockwell Collins Inc semiconductor device diode Avl RFQ PS43034 Optek Technology Inc semiconductor device diode Avl RFQ PR1596 Optek Technology Inc semiconductor device diode Avl RFQ DSR5400X Optek Technology Inc semiconductor device diode Avl RFQ CR1306F Scientific Radio Systems Inc semiconductor device diode Avl RFQ 995-9502-076 Rockwell Collins Inc semiconductor device diode Avl RFQ 83A0260-1 Crane Electronics Inc semiconductor device diode Avl RFQ 803721-4 Raytheon Aircraft semiconductor device diode Avl RFQ 41-1012-03 Crane Electronics Inc semiconductor device diode Avl RFQ 353-6616-012 Rockwell Collins Inc semiconductor device diode Avl RFQ 1901-1108 Avago Technologies Us Inc Division semiconductor device diode Avl RFQ 1901-1108 Hewlett Packard Co semiconductor device diode Avl RFQ 167258-01 Ge Aviation Systems Llc semiconductor device diode Avl RFQ 117606-001 Tdk Lambda Americas Inc semiconductor device diode Avl RFQ
Characteristics Data of NSN 5961013332230MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ABHP OVERALL LENGTH 0.300 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.900 INCHES MINIMUM ADAV OVERALL DIAMETER 0.180 INCHES MAXIMUM AXGY MOUNTING METHOD TERMINAL CBBL FEATURES PROVIDED BURN IN CTMZ SEMICONDUCTOR MATERIAL SILICON CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD CTQX CURRENT RATING PER CHARACTERISTIC 70.00 AMPERES PEAK FORWARD SURGE CURRENT NANOAMPERES CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.900 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.180 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | BURN IN |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 70.00 AMPERES PEAK FORWARD SURGE CURRENT NANOAMPERES |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE |