NSN 5961-01-336-1797 of Semiconductor Devices Unitized - Parts Details
| Alternative NSN: 5961013361797 |
| Item Name: Semiconductor Devices Unitized |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013361797 |
| NCB Code: USA (01) |
| Manufacturers: Electric Boat Corporation , Chromalox Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TD156.0853 ITEM 31, 4130-31810, 312303 under NSN 5961-01-336-1797 of Semiconductor Devices Unitized manufactured by Electric Boat Corporation, Chromalox Inc.
Federal Supply Class of NSN 5961-01-336-1797 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-336-1797, 5961013361797
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Part No Manufacturer Item Name QTY RFQ TD156.0853 ITEM 31 Electric Boat Corporation semiconductor devices unitized Avl RFQ 4130-31810 Chromalox Inc semiconductor devices unitized Avl RFQ 312303 Chromalox Inc semiconductor devices unitized Avl RFQ
Characteristics Data of NSN 5961013361797MRC Criteria Characteristic ABBH INCLOSURE MATERIAL CERAMIC AND METAL ABHP OVERALL LENGTH 27.000 INCHES NOMINAL ABKW OVERALL HEIGHT 21.000 INCHES NOMINAL ABMK OVERALL WIDTH 27.000 INCHES NOMINAL AFZC FUNCTION FOR WHICH DESIGNED SWITCHING AXGY MOUNTING METHOD PRESS FIT CTMZ SEMICONDUCTOR MATERIAL SILICON 1ST SEMICONDUCTOR DEVICE THYRISTOR CTQX CURRENT RATING PER CHARACTERISTIC 60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 1ST SEMICONDUCTOR DEVICE THYRISTOR CTQX CURRENT RATING PER CHARACTERISTIC 60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 2ND SEMICONDUCTOR DEVICE DIODE CTRD POWER RATING PER CHARACTERISTIC 41.5 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE TTQY TERMINAL TYPE AND QUANTITY 6 UNINSULATED WIRE LEAD CTRD POWER RATING PER CHARACTERISTIC 41.5 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE THYRISTOR ASKA COMPONENT NAME AND QUANTITY 3 SEMICONDUCTOR DEVICE DIODE AND 3 SEMICONDUCTOR DEVICE THYRISTOR CTMZ SEMICONDUCTOR MATERIAL SILICON 2ND SEMICONDUCTOR DEVICE DIODE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 2ND SEMICONDUCTOR DEVICE DIODE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 1ST SEMICONDUCTOR DEVICE THYRISTOR
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | CERAMIC AND METAL |
| ABHP | OVERALL LENGTH | 27.000 INCHES NOMINAL |
| ABKW | OVERALL HEIGHT | 21.000 INCHES NOMINAL |
| ABMK | OVERALL WIDTH | 27.000 INCHES NOMINAL |
| AFZC | FUNCTION FOR WHICH DESIGNED | SWITCHING |
| AXGY | MOUNTING METHOD | PRESS FIT |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON 1ST SEMICONDUCTOR DEVICE THYRISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 1ST SEMICONDUCTOR DEVICE THYRISTOR |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 60.00 AMPERES FORWARD CURRENT, AVERAGE ABSOLUTE 2ND SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 41.5 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 2ND SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
| CTRD | POWER RATING PER CHARACTERISTIC | 41.5 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET 1ST SEMICONDUCTOR DEVICE THYRISTOR |
| ASKA | COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE AND 3 SEMICONDUCTOR DEVICE THYRISTOR |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 2ND SEMICONDUCTOR DEVICE DIODE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 1ST SEMICONDUCTOR DEVICE THYRISTOR |