NSN 5961-01-374-7142 of Transistor - Parts Details
Alternative NSN: 5961013747142 |
Item Name: Transistor |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 013747142 |
NCB Code: USA (01) |
Manufacturers: Thales Systemes Aeroportes Sa , Harris Corporation , International Rectifier Corporation , Vishay Dale Electronics Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SS-32562, Q65-0002-002, IRFD9024 under NSN 5961-01-374-7142 of Transistor manufactured by Thales Systemes Aeroportes Sa, Harris Corporation, International Rectifier Corporation, Vishay Dale Electronics Inc.
Federal Supply Class of NSN 5961-01-374-7142 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-374-7142, 5961013747142
Characteristics Data of NSN 5961013747142MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 6.29 MILLIMETERS MAXIMUM ABKW OVERALL HEIGHT 8.63 MILLIMETERS MAXIMUM ABMK OVERALL WIDTH 5.02 MILLIMETERS MAXIMUM ALAS INTERNAL CONFIGURATION FIELD EFFECT AXGY MOUNTING METHOD TERMINAL CTMZ III SEMICONDUCTOR MATERIAL SILICON CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC -60.0 NOMINAL DRAIN TO SOURCE VOLTAGE CTQX CURRENT RATING PER CHARACTERISTIC -1.60 AMPERES NOMINAL DRAIN CURRENT CTRD POWER RATING PER CHARACTERISTIC 1.3 WATTS NOMINAL TOTAL POWER DISSIPATION CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION TTQY TERMINAL TYPE AND QUANTITY 4 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 6.29 MILLIMETERS MAXIMUM |
ABKW | OVERALL HEIGHT | 8.63 MILLIMETERS MAXIMUM |
ABMK | OVERALL WIDTH | 5.02 MILLIMETERS MAXIMUM |
ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 NOMINAL DRAIN TO SOURCE VOLTAGE |
CTQX | CURRENT RATING PER CHARACTERISTIC | -1.60 AMPERES NOMINAL DRAIN CURRENT |
CTRD | POWER RATING PER CHARACTERISTIC | 1.3 WATTS NOMINAL TOTAL POWER DISSIPATION |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 4 PRINTED CIRCUIT |