NSN 5961-01-462-9978 of Transistor - Parts Details
| Alternative NSN: 5961014629978 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 014629978 |
| NCB Code: USA (01) |
| Manufacturers: Anritsu Company , Nec Electronics Usa Inc Electronic |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 2SC3693 under NSN 5961-01-462-9978 of Transistor manufactured by Anritsu Company, Nec Electronics Usa Inc Electronic.
Federal Supply Class of NSN 5961-01-462-9978 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-462-9978, 5961014629978
Characteristics Data of NSN 5961014629978MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 30.500 MILLIMETERS MAXIMUM" AGAV END ITEM IDENTIFICATION 6625014252551E/IFSCM33297" AKPV MOUNTING FACILITY QUANTITY 3" AXGY MOUNTING METHOD TERMINAL" CTMZ III SEMICONDUCTOR MATERIAL SILICON ALLOY" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN" CTQX CURRENT RATING PER CHARACTERISTIC 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 5.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 20.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL" CTRD POWER RATING PER CHARACTERISTIC 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION" TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD" ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 30.500 MILLIMETERS MAXIMUM" AGAV END ITEM IDENTIFICATION 6625014252551E/IFSCM33297" AKPV MOUNTING FACILITY QUANTITY 3" AXGY MOUNTING METHOD TERMINAL" CTMZ III SEMICONDUCTOR MATERIAL SILICON ALLOY" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN" CTQX CURRENT RATING PER CHARACTERISTIC 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 5.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 20.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL" CTRD POWER RATING PER CHARACTERISTIC 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 150.0 DEG CELSIUS JUNCTION" TTQY TERMINAL TYPE AND QUANTITY 3 UNINSULATED WIRE LEAD"
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 30.500 MILLIMETERS MAXIMUM" |
| AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297" |
| AKPV | MOUNTING FACILITY QUANTITY | 3" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON ALLOY" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 5.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 20.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL" |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 30.500 MILLIMETERS MAXIMUM" |
| AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297" |
| AKPV | MOUNTING FACILITY QUANTITY | 3" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON ALLOY" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 5.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 20.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL" |
| CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION" |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD" |