NSN 5961-01-464-1751 of Semiconductor Device Diode - Parts Details
| Alternative NSN: 5961014641751 |
| Item Name: Semiconductor Device Diode |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 014641751 |
| NCB Code: USA (01) |
| Manufacturers: Anritsu Company , Hitachi Kokusai Electric America Ltd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1SS84 under NSN 5961-01-464-1751 of Semiconductor Device Diode manufactured by Anritsu Company, Hitachi Kokusai Electric America Ltd.
Federal Supply Class of NSN 5961-01-464-1751 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-464-1751, 5961014641751
Characteristics Data of NSN 5961014641751MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 4.2 MILLIMETERS MAXIMUM" ABJT TERMINAL LENGTH 26.0 MILLIMETERS MINIMUM" ADAV OVERALL DIAMETER 2.0 MILLIMETERS MAXIMUM" AGAV END ITEM IDENTIFICATION 6625014252551E/IFSCM03950" ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35" AXGY MOUNTING METHOD TERMINAL" AYQS TERMINAL CIRCLE DIAMETER 2.000 MILLIMETERS MAXIMUM" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" CTQX CURRENT RATING PER CHARACTERISTIC 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT ABSOLUTE AND 1.00 AMPERES FORWARD CURRENT, AVERAGE PRESET" CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE" CTRG CAPACITANCE RATING IN PICOFARADS 5.0 MAXIMUM" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION" TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD" ABBH INCLOSURE MATERIAL GLASS" ABHP OVERALL LENGTH 4.2 MILLIMETERS MAXIMUM" ABJT TERMINAL LENGTH 26.0 MILLIMETERS MINIMUM" ADAV OVERALL DIAMETER 2.0 MILLIMETERS MAXIMUM" AGAV END ITEM IDENTIFICATION 6625014252551E/IFSCM03950" ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35" AXGY MOUNTING METHOD TERMINAL" AYQS TERMINAL CIRCLE DIAMETER 2.000 MILLIMETERS MAXIMUM" CTMZ SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" CTQX CURRENT RATING PER CHARACTERISTIC 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT ABSOLUTE AND 1.00 AMPERES FORWARD CURRENT, AVERAGE PRESET" CTRD POWER RATING PER CHARACTERISTIC 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE" CTRG CAPACITANCE RATING IN PICOFARADS 5.0 MAXIMUM" CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 175.0 DEG CELSIUS JUNCTION" TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD"
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 4.2 MILLIMETERS MAXIMUM" |
| ABJT | TERMINAL LENGTH | 26.0 MILLIMETERS MINIMUM" |
| ADAV | OVERALL DIAMETER | 2.0 MILLIMETERS MAXIMUM" |
| AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM03950" |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 2.000 MILLIMETERS MAXIMUM" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT ABSOLUTE AND 1.00 AMPERES FORWARD CURRENT, AVERAGE PRESET" |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE" |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 5.0 MAXIMUM" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |
| ABBH | INCLOSURE MATERIAL | GLASS" |
| ABHP | OVERALL LENGTH | 4.2 MILLIMETERS MAXIMUM" |
| ABJT | TERMINAL LENGTH | 26.0 MILLIMETERS MINIMUM" |
| ADAV | OVERALL DIAMETER | 2.0 MILLIMETERS MAXIMUM" |
| AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM03950" |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35" |
| AXGY | MOUNTING METHOD | TERMINAL" |
| AYQS | TERMINAL CIRCLE DIAMETER | 2.000 MILLIMETERS MAXIMUM" |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 75.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 70.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES SOURCE CUTOFF CURRENT ABSOLUTE AND 1.00 AMPERES FORWARD CURRENT, AVERAGE PRESET" |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE" |
| CTRG | CAPACITANCE RATING IN PICOFARADS | 5.0 MAXIMUM" |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION" |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD" |