NSN 5961-01-578-3436 of Transistor - Parts Details
| Alternative NSN: 5961015783436 |
| Item Name: Transistor |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 015783436 |
| NCB Code: USA (01) |
| Manufacturers: International Rectifier Corporation , Thales Avionics |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers IRLML2502, 99214211 under NSN 5961-01-578-3436 of Transistor manufactured by International Rectifier Corporation, Thales Avionics.
Federal Supply Class of NSN 5961-01-578-3436 is FSC 5961 contains part details of Semiconductor Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5961-01-578-3436, 5961015783436
Characteristics Data of NSN 5961015783436MRC Criteria Characteristic ABHP OVERALL LENGTH 0.105 INCHES MINIMUM AND 0.120 INCHES MAXIMUM" ABKW OVERALL HEIGHT 0.032 INCHES MINIMUM AND 0.044 INCHES MAXIMUM" ABMK OVERALL WIDTH 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM" CTMZ III SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE" CTQX CURRENT RATING PER CHARACTERISTIC 4.20 AMPERES MAXIMUM DRAIN CURRENT" CTRD POWER RATING PER CHARACTERISTIC 1.2 WATTS MAXIMUM GATE POWER DISSIPATION" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY TRANSISTOR" ABHP OVERALL LENGTH 0.105 INCHES MINIMUM AND 0.120 INCHES MAXIMUM" ABKW OVERALL HEIGHT 0.032 INCHES MINIMUM AND 0.044 INCHES MAXIMUM" ABMK OVERALL WIDTH 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM" CTMZ III SEMICONDUCTOR MATERIAL SILICON" CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE" CTQX CURRENT RATING PER CHARACTERISTIC 4.20 AMPERES MAXIMUM DRAIN CURRENT" CTRD POWER RATING PER CHARACTERISTIC 1.2 WATTS MAXIMUM GATE POWER DISSIPATION" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY TRANSISTOR"
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.105 INCHES MINIMUM AND 0.120 INCHES MAXIMUM" |
| ABKW | OVERALL HEIGHT | 0.032 INCHES MINIMUM AND 0.044 INCHES MAXIMUM" |
| ABMK | OVERALL WIDTH | 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.20 AMPERES MAXIMUM DRAIN CURRENT" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.2 WATTS MAXIMUM GATE POWER DISSIPATION" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANSISTOR" |
| ABHP | OVERALL LENGTH | 0.105 INCHES MINIMUM AND 0.120 INCHES MAXIMUM" |
| ABKW | OVERALL HEIGHT | 0.032 INCHES MINIMUM AND 0.044 INCHES MAXIMUM" |
| ABMK | OVERALL WIDTH | 0.047 INCHES MINIMUM AND 0.055 INCHES MAXIMUM" |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON" |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 4.20 AMPERES MAXIMUM DRAIN CURRENT" |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.2 WATTS MAXIMUM GATE POWER DISSIPATION" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANSISTOR" |