NSN 5962-00-166-6256 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962001666256 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 001666256 |
| NCB Code: USA (00) |
| Manufacturers: Dla Land And Maritime , Intel Corp Sales Office , Raytheon Aircraft |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers DMS 82108B, C1101A1, C11011, 462793-1, 11011 under NSN 5962-00-166-6256 of Microcircuit Memory manufactured by Dla Land And Maritime, Intel Corp Sales Office, Raytheon Aircraft.
Federal Supply Class of NSN 5962-00-166-6256 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-00-166-6256, 5962001666256
-
Part No Manufacturer Item Name QTY RFQ DMS 82108B Dla Land And Maritime microcircuit memory Avl RFQ C1101A1 Intel Corp Sales Office microcircuit memory Avl RFQ C11011 Intel Corp Sales Office microcircuit memory Avl RFQ 462793-1 Raytheon Aircraft microcircuit memory Avl RFQ 11011 Intel Corp Sales Office microcircuit memory Avl RFQ
Characteristics Data of NSN 5962001666256MRC Criteria Characteristic ADAQ BODY LENGTH 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM ADAT BODY WIDTH 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM ADAU BODY HEIGHT 0.055 INCHES MINIMUM AND 0.125 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+160.0 DEG CELSIUS CBBL FEATURES PROVIDED MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 11 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -20.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.055 INCHES MINIMUM AND 0.125 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+160.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND LOW POWER AND 3-STATE OUTPUT AND WIRE-OR OUTPUTS AND EXPANDABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -20.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |