NSN 5962-01-081-9697 of Microcircuit Memory - Parts Details
Alternative NSN: 5962010819697 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 010819697 |
NCB Code: USA (01) |
Manufacturers: Hewlett Packard Co , University Of Washington , Dla Land And Maritime , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 1818-0498, 37239, ROM PROM FAMILY 020, TMS 2516JL under NSN 5962-01-081-9697 of Microcircuit Memory manufactured by Hewlett Packard Co, University Of Washington, Dla Land And Maritime, Texas Instrument Inc.
Federal Supply Class of NSN 5962-01-081-9697 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-081-9697, 5962010819697
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Part No Manufacturer Item Name QTY RFQ 1818-0498 Hewlett Packard Co microcircuit memory Avl RFQ 37239 University Of Washington microcircuit memory Avl RFQ ROM PROM FAMILY 020 Dla Land And Maritime microcircuit memory Avl RFQ TMS 2516JL Texas Instrument Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962010819697MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.595 INCHES MAXIMUM ADAU BODY HEIGHT 0.180 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 560.0 MILLIWATTS AFGA OPERATING TEMP RANGE +0.0/+70.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 13 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 20.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 18323-7266A15 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.595 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 560.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 18323-7266A15 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |