NSN 5962-01-111-4923 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011114923 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011114923 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Edo Corporation , Electro Switch Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM FAMILY 030, 505970-2, 505970-1, 503234-1 under NSN 5962-01-111-4923 of Microcircuit Memory manufactured by Dla Land And Maritime, Edo Corporation, Electro Switch Corp.
Federal Supply Class of NSN 5962-01-111-4923 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-111-4923, 5962011114923
Characteristics Data of NSN 5962011114923MRC Criteria Characteristic ADAQ BODY LENGTH 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM ADAT BODY WIDTH 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 770.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 12 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.5 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 770.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |