NSN 5962-01-115-6148 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011156148 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011156148 |
| NCB Code: USA (01) |
| Manufacturers: Philips Semiconductors Inc , Raytheon Technical Services Company , L 3 Communications |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers N82S185-F, 4014666-128, 4014397-01 under NSN 5962-01-115-6148 of Microcircuit Memory manufactured by Philips Semiconductors Inc, Raytheon Technical Services Company, L 3 Communications.
Federal Supply Class of NSN 5962-01-115-6148 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-115-6148, 5962011156148
-
Part No Manufacturer Item Name QTY RFQ N82S185-F Philips Semiconductors Inc microcircuit memory Avl RFQ 4014666-128 Raytheon Technical Services Company microcircuit memory Avl RFQ 4014666-128 L 3 Communications microcircuit memory Avl RFQ 4014397-01 L 3 Communications microcircuit memory Avl RFQ 4014397-01 Raytheon Technical Services Company microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011156148MRC Criteria Characteristic ADAQ BODY LENGTH 0.925 INCHES MAXIMUM ADAT BODY WIDTH 0.302 INCHES MAXIMUM ADAU BODY HEIGHT 0.175 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 409.6 MILLIWATTS AFGA OPERATING TEMP RANGE +0.0/+75.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 12 INPUT CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM TOTAL SUPPLY CZEQ TIME RATING PER CHACTERISTIC 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE PROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.925 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.302 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 409.6 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |