NSN 5962-01-123-4782 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011234782 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011234782 |
| NCB Code: USA (01) |
| Manufacturers: Mmi Amd , Dla Land And Maritime , Fairchild Semiconductor Corp , Intersil Corporation , Advanced Micro Devices Inc , Raytheon Aircraft |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SD948, ROM PROM FAMILY 017, MM5353, HR10733, HM9-7643-B2052-392 under NSN 5962-01-123-4782 of Microcircuit Memory manufactured by Mmi Amd, Dla Land And Maritime, Fairchild Semiconductor Corp, Intersil Corporation, Advanced Micro Devices Inc.
Federal Supply Class of NSN 5962-01-123-4782 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-123-4782, 5962011234782
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Part No Manufacturer Item Name QTY RFQ SD948 Mmi Amd microcircuit memory Avl RFQ ROM PROM FAMILY 017 Dla Land And Maritime microcircuit memory Avl RFQ MM5353 Mmi Amd microcircuit memory Avl RFQ HR10733 Fairchild Semiconductor Corp microcircuit memory Avl RFQ HM9-7643-B2052-392 Intersil Corporation microcircuit memory Avl RFQ HM7643 Intersil Corporation microcircuit memory Avl RFQ HL42543 Fairchild Semiconductor Corp microcircuit memory Avl RFQ DH75699 Advanced Micro Devices Inc microcircuit memory Avl RFQ B2052-392 Intersil Corporation microcircuit memory Avl RFQ B1614-1B Intersil Corporation microcircuit memory Avl RFQ 93453 Fairchild Semiconductor Corp microcircuit memory Avl RFQ 932883-392 Raytheon Aircraft microcircuit memory Avl RFQ 53S441-F Mmi Amd microcircuit memory Avl RFQ 5353-1F Mmi Amd microcircuit memory Avl RFQ 27S33 Advanced Micro Devices Inc microcircuit memory Avl RFQ 18534 Mmi Amd microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011234782MRC Criteria Characteristic ADAQ BODY LENGTH 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM ADAT BODY WIDTH 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM ADAU BODY HEIGHT 0.090 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 175.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL GLASS AND METAL CQSZ INCLOSURE CONFIGURATION FLAT PACK CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 12 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER OR GOLD CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM PMLC PRECIOUS MATERIAL AND LOCATION TERMINAL SURFACE GOLD PRMT PRECIOUS MATERIAL GOLD TEST TEST DATA DOCUMENT 82577-932883 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI TTQY TERMINAL TYPE AND QUANTITY 18 FLAT LEADS
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.090 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 175.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | GLASS AND METAL |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER OR GOLD |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TEST | TEST DATA DOCUMENT | 82577-932883 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 FLAT LEADS |