NSN 5962-01-155-1465 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011551465 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011551465 |
| NCB Code: USA (01) |
| Manufacturers: National Semiconductor Corp , Stmicroelectronics Inc , Intel Corp Sales Office , Agilent Technologies Inc , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers MM5290J-3, MK4116J-3, D2117-3, 1818-0341 under NSN 5962-01-155-1465 of Microcircuit Memory manufactured by National Semiconductor Corp, Stmicroelectronics Inc, Intel Corp Sales Office, Agilent Technologies Inc, Hewlett Packard Co.
Federal Supply Class of NSN 5962-01-155-1465 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-155-1465, 5962011551465
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Part No Manufacturer Item Name QTY RFQ MM5290J-3 National Semiconductor Corp microcircuit memory Avl RFQ MK4116J-3 Stmicroelectronics Inc microcircuit memory Avl RFQ D2117-3 Intel Corp Sales Office microcircuit memory Avl RFQ 1818-0341 Agilent Technologies Inc microcircuit memory Avl RFQ 1818-0341 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011551465MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 750 INCHES MINIMUM AND 0 790 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 265 INCHES MINIMUM AND 0 310 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 140 INCHES MINIMUM AND 0 165 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1000 0 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-10 080 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDDYNAMIC AND HERMETICALLY SEALED AND HIGH PERFORMANCE AND HIGH RELIABILITY AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN8 INPUT MEMORY CRHL BIT QUANTITY16384 MEMORY CSWJ WORD QUANTITY16384 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TTQY TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 790 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 265 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 165 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1000 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-10 080 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND HERMETICALLY SEALED AND HIGH PERFORMANCE AND HIGH RELIABILITY AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN8 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY16384 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |