NSN 5962-01-158-7419 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011587419 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011587419 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Smiths Aerospace Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SMJ2516-35JM, SMC2516-35JM, 23884 under NSN 5962-01-158-7419 of Microcircuit Memory manufactured by Texas Instrument Inc, Smiths Aerospace Inc.
Federal Supply Class of NSN 5962-01-158-7419 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-158-7419, 5962011587419
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Part No Manufacturer Item Name QTY RFQ SMJ2516-35JM Texas Instrument Inc microcircuit memory Avl RFQ SMC2516-35JM Texas Instrument Inc microcircuit memory Avl RFQ 23884 Smiths Aerospace Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011587419MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 290 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 600 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 205 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING285 0 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDLOW POWER AND ERASABLE AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT AND HERMETICALLY SEALED MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN13 INPUT MEMORY CRHL BIT QUANTITY16384 MEMORY CSWJ WORD QUANTITY2048 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC350 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 600 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 205 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING285 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDLOW POWER AND ERASABLE AND PROGRAMMABLE AND STATIC OPERATION AND 3-STATE OUTPUT AND HERMETICALLY SEALED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC6 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC350 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |