NSN 5962-01-159-9980 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011599980 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011599980 |
| NCB Code: USA (01) |
| Manufacturers: Titan Corp The , Bae Systems , Gec Marconi , Kearfott Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SM-A-858934-1, A399A711-1001 under NSN 5962-01-159-9980 of Microcircuit Memory manufactured by Titan Corp The, Bae Systems, Gec Marconi, Kearfott Corp.
Federal Supply Class of NSN 5962-01-159-9980 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-159-9980, 5962011599980
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Part No Manufacturer Item Name QTY RFQ SM-A-858934-1 Titan Corp The microcircuit memory Avl RFQ A399A711-1001 Bae Systems microcircuit memory Avl RFQ A399A711-1001 Gec Marconi microcircuit memory Avl RFQ A399A711-1001 Kearfott Corp microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011599980MRC Criteria Characteristic ADAQ BODY LENGTH 1.290 INCHES MAXIMUM ADAT BODY WIDTH 0.610 INCHES MAXIMUM ADAU BODY HEIGHT 0.210 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0 TO 110.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMED CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 11 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-3 MIL-M-38510 CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE PROM TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 110.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 11 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |