NSN 5962-01-171-1770 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011711770 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011711770 |
| NCB Code: USA (01) |
| Manufacturers: Rolls Royce Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TT-105315-01, 17-105315, 105667-01, 105315-01 under NSN 5962-01-171-1770 of Microcircuit Memory manufactured by Rolls Royce Corp.
Federal Supply Class of NSN 5962-01-171-1770 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-171-1770, 5962011711770
Characteristics Data of NSN 5962011711770MRC Criteria Characteristic ADAQ BODY LENGTH 0.840 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.185 INCHES MAXIMUM AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND PROGRAMMABLE AND SCHOTTKY AND HIGH SPEED AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.5 VOLTS NOMINAL POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND SCHOTTKY AND HIGH SPEED AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS NOMINAL POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |