NSN 5962-01-177-2468 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011772468 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011772468 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Stmicroelectronics Inc , Freescale Semiconductor Inc , On Semiconductors , Siemens Corp , Biomation Corp |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS4116-15NL, MK4116J-2, MCM4116BP-15, MCM4116BC-15, HYB4116P-2 under NSN 5962-01-177-2468 of Microcircuit Memory manufactured by Texas Instrument Inc, Stmicroelectronics Inc, Freescale Semiconductor Inc, On Semiconductors, Siemens Corp.
Federal Supply Class of NSN 5962-01-177-2468 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-177-2468, 5962011772468
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Part No Manufacturer Item Name QTY RFQ TMS4116-15NL Texas Instrument Inc microcircuit memory Avl RFQ MK4116J-2 Stmicroelectronics Inc microcircuit memory Avl RFQ MCM4116BP-15 Freescale Semiconductor Inc microcircuit memory Avl RFQ MCM4116BP-15 On Semiconductors microcircuit memory Avl RFQ MCM4116BC-15 Freescale Semiconductor Inc microcircuit memory Avl RFQ HYB4116P-2 Siemens Corp microcircuit memory Avl RFQ HYB4116-P2-DH Siemens Corp microcircuit memory Avl RFQ 1800-0229 Biomation Corp microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011772468MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 750 INCHES MINIMUM AND 0 780 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 245 INCHES MINIMUM AND 0 275 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 120 INCHES MINIMUM AND 0 180 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDDYNAMIC AND HERMETICALLY SEALED AND HIGH SPEED MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN11 INPUT MEMORY CRHL BIT QUANTITY16384 MEMORY CSWJ WORD QUANTITY16384 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 5 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TTQY TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 780 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 275 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 120 INCHES MINIMUM AND 0 180 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND HERMETICALLY SEALED AND HIGH SPEED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN11 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY16384 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |