NSN 5962-01-186-0382 of Microcircuit Memory - Parts Details
Alternative NSN: 5962011860382 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011860382 |
NCB Code: USA (01) |
Manufacturers: Texas Instrument Inc , Dla Land And Maritime , Mmi Amd |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TBP18S42MJ, ROM PROM FAMILY 016, MM5349-1J 883B under NSN 5962-01-186-0382 of Microcircuit Memory manufactured by Texas Instrument Inc, Dla Land And Maritime, Mmi Amd.
Federal Supply Class of NSN 5962-01-186-0382 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-186-0382, 5962011860382
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Part No Manufacturer Item Name QTY RFQ TBP18S42MJ Texas Instrument Inc microcircuit memory Avl RFQ ROM PROM FAMILY 016 Dla Land And Maritime microcircuit memory Avl RFQ MM5349-1J 883B Mmi Amd microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011860382MRC Criteria Characteristic ADAQ BODY LENGTH 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM ADAT BODY WIDTH 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ADAU BODY HEIGHT 0.180 INCHES NOMINAL AEHX MAXIMUM POWER DISSIPATION RATING 600.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.5 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.180 INCHES NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 600.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | ROM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |