NSN 5962-01-192-4669 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962011924669 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011924669 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Telephonics Corporation , Edo Corporation , Eaton Corp , Intel Corp Sales Office |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM FAMILY 020, 511557-3, 511557-1, 511554, 2716-2 under NSN 5962-01-192-4669 of Microcircuit Memory manufactured by Dla Land And Maritime, Telephonics Corporation, Edo Corporation, Eaton Corp, Intel Corp Sales Office.
Federal Supply Class of NSN 5962-01-192-4669 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-192-4669, 5962011924669
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Part No Manufacturer Item Name QTY RFQ ROM PROM FAMILY 020 Dla Land And Maritime microcircuit memory Avl RFQ 511557-3 Telephonics Corporation microcircuit memory Avl RFQ 511557-1 Edo Corporation microcircuit memory Avl RFQ 511557-1 Telephonics Corporation microcircuit memory Avl RFQ 511554 Eaton Corp microcircuit memory Avl RFQ 511554 Edo Corporation microcircuit memory Avl RFQ 2716-2 Intel Corp Sales Office microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011924669MRC Criteria Characteristic AEHX MAXIMUM POWER DISSIPATION RATING 525.0 MILLIWATTS AFGA OPERATING TEMP RANGE -10.0/+80.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+125.0 DEG CELSIUS CBBL FEATURES PROVIDED PROGRAMMABLE AND ERASABLE AND STATIC OPERATION CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 13 INPUT CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 6.0 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE ROM TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -10.0/+80.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE AND ERASABLE AND STATIC OPERATION |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |