NSN 5962-01-198-2183 of Microcircuit Memory - Parts Details
Alternative NSN: 5962011982183 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011982183 |
NCB Code: USA (01) |
Manufacturers: Harris Corporation , Intersil Corporation , Cardion Inc , Target Corp , Bae Systems |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers HM1-6514B-8, HM1-6514B 883, 8102404VA, 408637, 26401-0339 under NSN 5962-01-198-2183 of Microcircuit Memory manufactured by Harris Corporation, Intersil Corporation, Cardion Inc, Target Corp, Bae Systems.
Federal Supply Class of NSN 5962-01-198-2183 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-198-2183, 5962011982183
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Part No Manufacturer Item Name QTY RFQ HM1-6514B-8 Harris Corporation microcircuit memory Avl RFQ HM1-6514B-8 Intersil Corporation microcircuit memory Avl RFQ HM1-6514B 883 Intersil Corporation microcircuit memory Avl RFQ 8102404VA Intersil Corporation microcircuit memory Avl RFQ 408637 Cardion Inc microcircuit memory Avl RFQ 408637 Target Corp microcircuit memory Avl RFQ 26401-0339 Bae Systems microcircuit memory Avl RFQ 231398-001 Bae Systems microcircuit memory Avl RFQ
Characteristics Data of NSN 5962011982183MRC Criteria Characteristic ADAQ BODY LENGTH 0.960 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.185 INCHES NOMINAL AEHX MAXIMUM POWER DISSIPATION RATING 300.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION RECEIVING SET,COUNTERMEASURES AN/ALR-56C CBBL FEATURES PROVIDED HERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 12 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-6 MIL-M-38510 CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 8.3 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE RAM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 18 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.960 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES NOMINAL |
AEHX | MAXIMUM POWER DISSIPATION RATING | 300.0 MILLIWATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
AGAV | END ITEM IDENTIFICATION | RECEIVING SET,COUNTERMEASURES AN/ALR-56C |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND ELECTROSTATIC SENSITIVE |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 8.3 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | RAM |
CZZZ | MEMORY CAPACITY | UNKNOWN |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |