NSN 5962-01-216-0733 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012160733 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012160733 |
| NCB Code: USA (01) |
| Manufacturers: Wavetek Rockland Inc Division , Texas Instrument Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers 8410-00-0001, 8007-42-8800, 74S288J under NSN 5962-01-216-0733 of Microcircuit Memory manufactured by Wavetek Rockland Inc Division, Texas Instrument Inc.
Federal Supply Class of NSN 5962-01-216-0733 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-216-0733, 5962012160733
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Part No Manufacturer Item Name QTY RFQ 8410-00-0001 Wavetek Rockland Inc Division microcircuit memory Avl RFQ 8007-42-8800 Wavetek Rockland Inc Division microcircuit memory Avl RFQ 74S288J Texas Instrument Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012160733MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH0 755 INCHES MINIMUM AND 0 785 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 245 INCHES MINIMUM AND 0 280 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 180 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING400 0 MILLIWATTS MEMORY AFGA OPERATING TEMP RANGE-0 070 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDPROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR MEMORY CQSJ INCLOSURE MATERIALCERAMIC AND GLASS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN6 INPUT MEMORY CRHL BIT QUANTITY256 MEMORY CSWJ WORD QUANTITY32 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZEQ TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT MEMORY CZER MEMORY DEVICE TYPEROM MEMORY TTQY TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 755 INCHES MINIMUM AND 0 785 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 280 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING400 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND BIPOLAR |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
| MEMORY | CRHL | BIT QUANTITY256 |
| MEMORY | CSWJ | WORD QUANTITY32 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |