NSN 5962-01-217-5380 of Microcircuit Memory - Parts Details
Alternative NSN: 5962012175380 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012175380 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc , Msis Semiconductor Inc , Preco Equipment Co , Dla Land And Maritime |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers AM9128-12DMB, AM9128-12 BJA, 8103907JX, 8103907JB, 8103907JA under NSN 5962-01-217-5380 of Microcircuit Memory manufactured by Advanced Micro Devices Inc, Msis Semiconductor Inc, Preco Equipment Co, Dla Land And Maritime.
Federal Supply Class of NSN 5962-01-217-5380 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-217-5380, 5962012175380
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Part No Manufacturer Item Name QTY RFQ AM9128-12DMB Advanced Micro Devices Inc microcircuit memory Avl RFQ AM9128-12 BJA Advanced Micro Devices Inc microcircuit memory Avl RFQ AM9128-12 BJA Msis Semiconductor Inc microcircuit memory Avl RFQ 8103907JX Preco Equipment Co microcircuit memory Avl RFQ 8103907JB Dla Land And Maritime microcircuit memory Avl RFQ 8103907JA Dla Land And Maritime microcircuit memory Avl RFQ 81039 Dla Land And Maritime microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012175380MRC Criteria Characteristic MEMORY ADAQ BODY LENGTH1 290 INCHES MAXIMUM MEMORY ADAT BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 210 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY AFGA OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS MEMORY AFJQ STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS MEMORY CBBL FEATURES PROVIDEDHERMETICALLY SEALED AND STATIC OPERATION AND WENABLE MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CQZP INPUT CIRCUIT PATTERN22 INPUT MEMORY CRHL BIT QUANTITY16384 MEMORY CSWJ WORD QUANTITY2048 MEMORY CTFT CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE MEMORY CZER MEMORY DEVICE TYPERAM MEMORY TEST TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC MEMORY TTQY TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND STATIC OPERATION AND WENABLE |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |