NSN 5962-01-237-4041 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012374041 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012374041 |
| NCB Code: USA (01) |
| Manufacturers: Philips Semiconductors Inc , Dla Land And Maritime , Intersil Corporation , Raytheon Aircraft |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers S82S185F 883C, ROM PROM FAMILY 007, HM1-7685-8, 722922-50, 46746-1 under NSN 5962-01-237-4041 of Microcircuit Memory manufactured by Philips Semiconductors Inc, Dla Land And Maritime, Intersil Corporation, Raytheon Aircraft.
Federal Supply Class of NSN 5962-01-237-4041 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-237-4041, 5962012374041
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Part No Manufacturer Item Name QTY RFQ S82S185F 883C Philips Semiconductors Inc microcircuit memory Avl RFQ ROM PROM FAMILY 007 Dla Land And Maritime microcircuit memory Avl RFQ HM1-7685-8 Intersil Corporation microcircuit memory Avl RFQ 722922-50 Raytheon Aircraft microcircuit memory Avl RFQ 46746-1 Raytheon Aircraft microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012374041MRC Criteria Characteristic ADAQ BODY LENGTH 0.925 INCHES MAXIMUM ADAT BODY WIDTH 0.302 INCHES MAXIMUM ADAU BODY HEIGHT 0.175 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 409.6 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 12 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 18 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.925 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.302 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 409.6 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |