NSN 5962-01-257-2131 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012572131 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012572131 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Intersil Corporation , Teledyne Technologies Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers ROM PROM FAMILY 016, HM1-7649, 847721 under NSN 5962-01-257-2131 of Microcircuit Memory manufactured by Dla Land And Maritime, Intersil Corporation, Teledyne Technologies Inc.
Federal Supply Class of NSN 5962-01-257-2131 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-257-2131, 5962012572131
Characteristics Data of NSN 5962012572131MRC Criteria Characteristic ADAQ BODY LENGTH 0.970 INCHES MAXIMUM ADAT BODY WIDTH 0.305 INCHES MAXIMUM ADAU BODY HEIGHT 0.170 INCHES MAXIMUM AFGA OPERATING TEMP RANGE +0.0/+75.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND HIGH SPEED AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE AND SCHOTTKY CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 10 INPUT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE ROM CZZZ MEMORY CAPACITY UNKNOWN TTQY TERMINAL TYPE AND QUANTITY 20 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.970 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.305 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.170 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | +0.0/+75.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH SPEED AND 3-STATE OUTPUT AND W/ENABLE AND PROGRAMMABLE AND SCHOTTKY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |