NSN 5962-01-262-2712 of Microcircuit Memory - Parts Details
Alternative NSN: 5962012622712 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012622712 |
NCB Code: USA (01) |
Manufacturers: Texas Instrument Inc , Advanced Micro Devices Inc , Mmi Amd , Dla Land And Maritime |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TIBPAL16R8-20MFKB, PAL16R8BML 883B, 5962-85155022X, 5962-85155022C, 5962-85155022BX under NSN 5962-01-262-2712 of Microcircuit Memory manufactured by Texas Instrument Inc, Advanced Micro Devices Inc, Mmi Amd, Dla Land And Maritime.
Federal Supply Class of NSN 5962-01-262-2712 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-262-2712, 5962012622712
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Part No Manufacturer Item Name QTY RFQ TIBPAL16R8-20MFKB Texas Instrument Inc microcircuit memory Avl RFQ PAL16R8BML 883B Advanced Micro Devices Inc microcircuit memory Avl RFQ PAL16R8BML 883B Mmi Amd microcircuit memory Avl RFQ 5962-85155022X Dla Land And Maritime microcircuit memory Avl RFQ 5962-85155022C Dla Land And Maritime microcircuit memory Avl RFQ 5962-85155022BX Dla Land And Maritime microcircuit memory Avl RFQ 5962-85155022BB Dla Land And Maritime microcircuit memory Avl RFQ 5962-85155022BA Dla Land And Maritime microcircuit memory Avl RFQ 5962-85155022B Dla Land And Maritime microcircuit memory Avl RFQ 5962-85155022A Dla Land And Maritime microcircuit memory Avl RFQ 5962-85155 Dla Land And Maritime microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012622712MRC Criteria Characteristic ADAQ BODY LENGTH 0.350 INCHES MAXIMUM ADAT BODY WIDTH 0.350 INCHES MAXIMUM ADAU BODY HEIGHT 0.100 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.1 WATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED MONOLITHIC AND BIPOLAR AND PROGRAMMABLE CQSJ INCLOSURE MATERIAL METAL OR PLASTIC OR CERAMIC CQSZ INCLOSURE CONFIGURATION LEADED CHIP CARRIER CQWX OUTPUT LOGIC FORM BIPOLAR METAL-OXIDE SEMICONDUCTOR CQZP INPUT CIRCUIT PATTERN 16 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR C-2 MIL-M-38510 CTQX CURRENT RATING PER CHARACTERISTIC 12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZER MEMORY DEVICE TYPE PAL TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 20 PIN
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.350 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.350 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.100 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND BIPOLAR AND PROGRAMMABLE |
CQSJ | INCLOSURE MATERIAL | METAL OR PLASTIC OR CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | LEADED CHIP CARRIER |
CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-2 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZER | MEMORY DEVICE TYPE | PAL |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PIN |