NSN 5962-01-264-3011 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962012643011 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012643011 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Texas Instrument Inc , Mmi Amd , Advanced Micro Devices Inc , Hamilton Sundstrand Corporation |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers PROM ROM HEAD 213, PAL16L8A-2MFKB, PAL16L8A 2ML 883B, AMPAL16L8L B2A, 81036112X under NSN 5962-01-264-3011 of Microcircuit Memory manufactured by Dla Land And Maritime, Texas Instrument Inc, Mmi Amd, Advanced Micro Devices Inc, Hamilton Sundstrand Corporation.
Federal Supply Class of NSN 5962-01-264-3011 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-264-3011, 5962012643011
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Part No Manufacturer Item Name QTY RFQ PROM ROM HEAD 213 Dla Land And Maritime microcircuit memory Avl RFQ PAL16L8A-2MFKB Texas Instrument Inc microcircuit memory Avl RFQ PAL16L8A 2ML 883B Mmi Amd microcircuit memory Avl RFQ AMPAL16L8L B2A Advanced Micro Devices Inc microcircuit memory Avl RFQ 81036112X Dla Land And Maritime microcircuit memory Avl RFQ 81036112B Dla Land And Maritime microcircuit memory Avl RFQ 81036112A Dla Land And Maritime microcircuit memory Avl RFQ 81036 Dla Land And Maritime microcircuit memory Avl RFQ 794952-1-0013 Hamilton Sundstrand Corporation microcircuit memory Avl RFQ 794952-1 Hamilton Sundstrand Corporation microcircuit memory Avl RFQ
Characteristics Data of NSN 5962012643011MRC Criteria Characteristic ADAQ BODY LENGTH 0.358 INCHES MAXIMUM ADAT BODY WIDTH 0.358 INCHES MAXIMUM ADAU BODY HEIGHT 0.100 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 500.0 MILLIWATTS AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND POSITIVE OUTPUTS CQSJ INCLOSURE MATERIAL CERAMIC AND GLASS CQSZ INCLOSURE CONFIGURATION LEADLESS FLAT PACK CQWX OUTPUT LOGIC FORM TRANSISTOR-TRANSISTOR LOGIC CQZP INPUT CIRCUIT PATTERN 16 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR C-2 MIL-M-38510 CTQX CURRENT RATING PER CHARACTERISTIC 100.00 MILLIAMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE NOT APPLICABLE CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZER MEMORY DEVICE TYPE PAL TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 20 LEADLESS
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.358 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.358 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.100 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-2 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE NOT APPLICABLE |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 LEADLESS |