NSN 5962-01-330-0696 of Microcircuit Memory - Parts Details
Alternative NSN: 5962013300696 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013300696 |
NCB Code: USA (01) |
Manufacturers: Texas Instrument Inc , Integrated Device Technology Inc , Cypress Semiconductor Corporation , Dla Land And Maritime , Navair Ltd , Paeaeesikunta Logistiikkaosasto |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers SMJ68CE16S-55JDM, IDT6116SA55TDB, IDT6116SA55TB, CY7C128A-55DMB, CY7C128-55DMB under NSN 5962-01-330-0696 of Microcircuit Memory manufactured by Texas Instrument Inc, Integrated Device Technology Inc, Cypress Semiconductor Corporation, Dla Land And Maritime, Navair Ltd.
Federal Supply Class of NSN 5962-01-330-0696 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-330-0696, 5962013300696
-
Part No Manufacturer Item Name QTY RFQ SMJ68CE16S-55JDM Texas Instrument Inc microcircuit memory Avl RFQ IDT6116SA55TDB Integrated Device Technology Inc microcircuit memory Avl RFQ IDT6116SA55TB Integrated Device Technology Inc microcircuit memory Avl RFQ CY7C128A-55DMB Cypress Semiconductor Corporation microcircuit memory Avl RFQ CY7C128-55DMB Cypress Semiconductor Corporation microcircuit memory Avl RFQ 8403611LX Dla Land And Maritime microcircuit memory Avl RFQ 8403611LB Dla Land And Maritime microcircuit memory Avl RFQ 8403611LA Dla Land And Maritime microcircuit memory Avl RFQ 84036 Dla Land And Maritime microcircuit memory Avl RFQ 3255393-119 Navair Ltd microcircuit memory Avl RFQ 10133966 Paeaeesikunta Logistiikkaosasto microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013300696MRC Criteria Characteristic ADAQ BODY LENGTH 1.280 INCHES MAXIMUM ADAU BODY HEIGHT 0.200 INCHES MAXIMUM AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFGA OPERATING TEMP RANGE -55.0 TO 125.0 DEG CELSIUS AFJQ STORAGE TEMP RANGE -65.0 TO 150.0 DEG CELSIUS CBBL FEATURES PROVIDED MONOLITHIC AND STATIC OPERATION CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 22 INPUT CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-9 MIL-M-38510 CTQX CURRENT RATING PER CHARACTERISTIC 120.00 MILLIAMPERES MAXIMUM SUPPLY CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 7.0 VOLTS MAXIMUM POWER SOURCE TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 24 PRINTED CIRCUIT CZER MEMORY DEVICE TYPE RAM ADAT BODY WIDTH 0.310 INCHES MAXIMUM
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.200 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND STATIC OPERATION |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 120.00 MILLIAMPERES MAXIMUM SUPPLY |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
CZER | MEMORY DEVICE TYPE | RAM |
ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |