NSN 5962-01-341-2450 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013412450 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013412450 |
| NCB Code: USA (01) |
| Manufacturers: Texas Instrument Inc , Micron Industries Corp , Dla Land And Maritime , Hewlett Packard Co |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TMS4256-12NL, SMJ4256-12JDS, MT1259-12, 8515203EA, 1818-3307 under NSN 5962-01-341-2450 of Microcircuit Memory manufactured by Texas Instrument Inc, Micron Industries Corp, Dla Land And Maritime, Hewlett Packard Co.
Federal Supply Class of NSN 5962-01-341-2450 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-341-2450, 5962013412450
-
Part No Manufacturer Item Name QTY RFQ TMS4256-12NL Texas Instrument Inc microcircuit memory Avl RFQ SMJ4256-12JDS Texas Instrument Inc microcircuit memory Avl RFQ MT1259-12 Micron Industries Corp microcircuit memory Avl RFQ 8515203EA Dla Land And Maritime microcircuit memory Avl RFQ 1818-3307 Hewlett Packard Co microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013412450MRC Criteria Characteristic MEMORY CQZP INPUT CIRCUIT PATTERN13 INPUT MEMORY CRHL BIT QUANTITY262144 MEMORY CZER MEMORY DEVICE TYPERAM MEMORY ABKW OVERALL HEIGHT0 400 INCHES MAXIMUM MEMORY ADAQ BODY LENGTH0 840 INCHES MAXIMUM MEMORY AEHX MAXIMUM POWER DISSIPATION RATING1 0 WATTS MEMORY CBBL FEATURES PROVIDEDDYNAMIC AND MONOLITHIC AND WCLOCK AND WBUFFERED OUTPUT MEMORY CTQX CURRENT RATING PER CHARACTERISTIC90 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE MEMORY CXCY PART NAME ASSIGNED BY CONTROLLING AGENCYDYNAMIC RANDOM ACCESS MEMORY MEMORY CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE MEMORY ZZZK SPECIFICATIONSTANDARD DATA81349-MIL-M-38510246 GOVERNMENT SPECIFICATION MEMORY CZEQ TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MINIMUM ACCESS AND 120 00 NANOSECONDS MAXIMUM ACCESS MEMORY TEST TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI MEMORY ADAT BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM MEMORY ADAU BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM MEMORY AFJQ STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS MEMORY CQSZ INCLOSURE CONFIGURATIONDUAL-IN-LINE MEMORY CSWJ WORD QUANTITY262144 MEMORY CTFT CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 MEMORY CWSG TERMINAL SURFACE TREATMENTSOLDER MEMORY AFGA OPERATING TEMP RANGE-55 0110 0 DEG CELSIUS MEMORY CQSJ INCLOSURE MATERIALCERAMIC MEMORY CQWX OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC MEMORY CZEP CAPITANCE RATING PER CHARACTERISTICERR-060 MAXIMUM AND ERR-060 MAXIMUM MEMORY TTQY TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CRHL | BIT QUANTITY262144 |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | ABKW | OVERALL HEIGHT0 400 INCHES MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND MONOLITHIC AND WCLOCK AND WBUFFERED OUTPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC90 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYDYNAMIC RANDOM ACCESS MEMORY |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA81349-MIL-M-38510246 GOVERNMENT SPECIFICATION |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MINIMUM ACCESS AND 120 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CSWJ | WORD QUANTITY262144 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0110 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTICERR-060 MAXIMUM AND ERR-060 MAXIMUM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |