NSN 5962-01-365-7560 of Microcircuit Memory - Parts Details
Alternative NSN: 5962013657560 |
Item Name: Microcircuit Memory |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013657560 |
NCB Code: USA (01) |
Manufacturers: Toshiba International Corporation , Dcns Navires Armes Lorient , Mitsubishi Caterpillar Forklift , Hitachi America Ltd , Hitachi Kokusai Electric America Ltd , Sony Electronics Inc , Tektronix Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TC551001AFL-10, RAR4564, M5M51008FP-10, HM628128LFP-10, CXK581000M-10L under NSN 5962-01-365-7560 of Microcircuit Memory manufactured by Toshiba International Corporation, Dcns Navires Armes Lorient, Mitsubishi Caterpillar Forklift, Hitachi America Ltd, Hitachi Kokusai Electric America Ltd.
Federal Supply Class of NSN 5962-01-365-7560 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-365-7560, 5962013657560
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Part No Manufacturer Item Name QTY RFQ TC551001AFL-10 Toshiba International Corporation microcircuit memory Avl RFQ RAR4564 Dcns Navires Armes Lorient microcircuit memory Avl RFQ M5M51008FP-10 Mitsubishi Caterpillar Forklift microcircuit memory Avl RFQ HM628128LFP-10 Hitachi America Ltd microcircuit memory Avl RFQ HM628128LFP-10 Hitachi Kokusai Electric America Ltd microcircuit memory Avl RFQ CXK581000M-10L Sony Electronics Inc microcircuit memory Avl RFQ CXK581000AM-10LL Sony Electronics Inc microcircuit memory Avl RFQ 156-6151-01 Tektronix Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013657560MRC Criteria Characteristic CQSJ INCLOSURE MATERIAL PLASTIC CQSZ INCLOSURE CONFIGURATION SINGLE-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CZEQ TIME RATING PER CHACTERISTIC 100.00 NANOSECONDS MAXIMUM ACCESS CZER MEMORY DEVICE TYPE RAM
MRC | Criteria | Characteristic |
---|---|---|
CQSJ | INCLOSURE MATERIAL | PLASTIC |
CQSZ | INCLOSURE CONFIGURATION | SINGLE-IN-LINE |
CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM ACCESS |
CZER | MEMORY DEVICE TYPE | RAM |