NSN 5962-01-450-5691 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962014505691 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014505691 |
| NCB Code: USA (01) |
| Manufacturers: Akron Brass Company |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers X28C512PMB-12 under NSN 5962-01-450-5691 of Microcircuit Memory manufactured by Akron Brass Company.
Federal Supply Class of NSN 5962-01-450-5691 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-450-5691, 5962014505691
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Part No Manufacturer Item Name QTY RFQ X28C512PMB-12 Akron Brass Company microcircuit memory Avl RFQ
Characteristics Data of NSN 5962014505691MRC Criteria Characteristic CBBL FEATURES PROVIDED BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL PLASTIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.0 VOLTS NOMINAL POWER SOURCE CZER MEMORY DEVICE TYPE EEPROM FEAT SPECIAL FEATURES ACCESS SPEED 120.0 NANOSECONDS TTQY TERMINAL TYPE AND QUANTITY 32 PIN CBBL FEATURES PROVIDED BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT CQSJ INCLOSURE MATERIAL PLASTIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.0 VOLTS NOMINAL POWER SOURCE CZER MEMORY DEVICE TYPE EEPROM FEAT SPECIAL FEATURES ACCESS SPEED 120.0 NANOSECONDS TTQY TERMINAL TYPE AND QUANTITY 32 PIN
| MRC | Criteria | Characteristic |
|---|---|---|
| CBBL | FEATURES PROVIDED | BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | EEPROM |
| FEAT | SPECIAL FEATURES | ACCESS SPEED 120.0 NANOSECONDS |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PIN |
| CBBL | FEATURES PROVIDED | BURN IN, MIL-STD-883, CLASS B AND LOW POWER AND HIGH PERFORMANCE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | PLASTIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | EEPROM |
| FEAT | SPECIAL FEATURES | ACCESS SPEED 120.0 NANOSECONDS |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PIN |