NSN 5962-01-549-2856 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962015492856 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 015492856 |
| NCB Code: USA (01) |
| Manufacturers: Xilinx Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers XC4020E-4PQ208C under NSN 5962-01-549-2856 of Microcircuit Memory manufactured by Xilinx Inc.
Federal Supply Class of NSN 5962-01-549-2856 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-549-2856, 5962015492856
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Part No Manufacturer Item Name QTY RFQ XC4020E-4PQ208C Xilinx Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962015492856MRC Criteria Characteristic ADAQ BODY LENGTH 30.6 MILLIMETERS NOMINAL" ADAT BODY WIDTH 30.6 MILLIMETERS NOMINAL" ADAU BODY HEIGHT 0.5 MILLIMETERS NOMINAL" AFGA OPERATING TEMP RANGE +0.0/+85.0 DEG CELSIUS" CBBL FEATURES PROVIDED LOW POWER AND HIGH PERFORMANCE AND SYNCHRONOUS AND OPEN DRAIN" CQSJ INCLOSURE MATERIAL PLASTIC" CQSZ INCLOSURE CONFIGURATION FLAT PACK" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC" CTQX CURRENT RATING PER CHARACTERISTIC 12.00 MICROAMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE ABSOLUTE" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY FIELD PROGRAMMABLE LOGIC GATE ARRAY" CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.0 VOLTS NOMINAL TOTAL SUPPLY" CZEQ TIME RATING PER CHACTERISTIC 7.00 NANOSECONDS AGC THRESHOLD PEAK" CZER MEMORY DEVICE TYPE PROM" CZZZ MEMORY CAPACITY 329312 BITS" TTQY TERMINAL TYPE AND QUANTITY 208 PIN" ADAQ BODY LENGTH 30.6 MILLIMETERS NOMINAL" ADAT BODY WIDTH 30.6 MILLIMETERS NOMINAL" ADAU BODY HEIGHT 0.5 MILLIMETERS NOMINAL" AFGA OPERATING TEMP RANGE +0.0/+85.0 DEG CELSIUS" CBBL FEATURES PROVIDED LOW POWER AND HIGH PERFORMANCE AND SYNCHRONOUS AND OPEN DRAIN" CQSJ INCLOSURE MATERIAL PLASTIC" CQSZ INCLOSURE CONFIGURATION FLAT PACK" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC" CTQX CURRENT RATING PER CHARACTERISTIC 12.00 MICROAMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE ABSOLUTE" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY FIELD PROGRAMMABLE LOGIC GATE ARRAY" CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC 5.0 VOLTS NOMINAL TOTAL SUPPLY" CZEQ TIME RATING PER CHACTERISTIC 7.00 NANOSECONDS AGC THRESHOLD PEAK" CZER MEMORY DEVICE TYPE PROM" CZZZ MEMORY CAPACITY 329312 BITS" TTQY TERMINAL TYPE AND QUANTITY 208 PIN"
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 30.6 MILLIMETERS NOMINAL" |
| ADAT | BODY WIDTH | 30.6 MILLIMETERS NOMINAL" |
| ADAU | BODY HEIGHT | 0.5 MILLIMETERS NOMINAL" |
| AFGA | OPERATING TEMP RANGE | +0.0/+85.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | LOW POWER AND HIGH PERFORMANCE AND SYNCHRONOUS AND OPEN DRAIN" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 MICROAMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE ABSOLUTE" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | FIELD PROGRAMMABLE LOGIC GATE ARRAY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 7.00 NANOSECONDS AGC THRESHOLD PEAK" |
| CZER | MEMORY DEVICE TYPE | PROM" |
| CZZZ | MEMORY CAPACITY | 329312 BITS" |
| TTQY | TERMINAL TYPE AND QUANTITY | 208 PIN" |
| ADAQ | BODY LENGTH | 30.6 MILLIMETERS NOMINAL" |
| ADAT | BODY WIDTH | 30.6 MILLIMETERS NOMINAL" |
| ADAU | BODY HEIGHT | 0.5 MILLIMETERS NOMINAL" |
| AFGA | OPERATING TEMP RANGE | +0.0/+85.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | LOW POWER AND HIGH PERFORMANCE AND SYNCHRONOUS AND OPEN DRAIN" |
| CQSJ | INCLOSURE MATERIAL | PLASTIC" |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC" |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 MICROAMPERES FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE ABSOLUTE" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | FIELD PROGRAMMABLE LOGIC GATE ARRAY" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL TOTAL SUPPLY" |
| CZEQ | TIME RATING PER CHACTERISTIC | 7.00 NANOSECONDS AGC THRESHOLD PEAK" |
| CZER | MEMORY DEVICE TYPE | PROM" |
| CZZZ | MEMORY CAPACITY | 329312 BITS" |
| TTQY | TERMINAL TYPE AND QUANTITY | 208 PIN" |