NSN 5980-00-275-1967 of Light Emitting Diode - Parts Details
Alternative NSN: 5980002751967 |
Item Name: Light Emitting Diode |
FSG: 59 Electrical and Electronic Equipment Components |
Federal Supply Class (FSC): 5980 Optoelectrical Devices and Associated Hardware |
NIIN: 002751967 |
NCB Code: USA (00) |
Manufacturers: Texas Instrument Inc , Siemens Corp , Fluke Corporation , Modcomp Inc , Raytheon Aircraft , Continental Electronics Corporation , Picatinny Arsenal , Thermo Electric Co , Data Device Corporation , Raytheon Technical Services Company , Thales Training And Simulation Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers TIL220, TIL210, T1L220, LDR5101, 783167 under NSN 5980-00-275-1967 of Light Emitting Diode manufactured by Texas Instrument Inc, Siemens Corp, Fluke Corporation, Modcomp Inc, Raytheon Aircraft.
Federal Supply Class of NSN 5980-00-275-1967 is FSC 5980 contains part details of Optoelectrical Devices and Associated Hardware. Quote for your desired part numbers.
Part Number's List for NSN 5980-00-275-1967, 5980002751967
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Part No Manufacturer Item Name QTY RFQ TIL220 Texas Instrument Inc light emitting diode Avl RFQ TIL210 Texas Instrument Inc light emitting diode Avl RFQ T1L220 Texas Instrument Inc light emitting diode Avl RFQ LDR5101 Siemens Corp light emitting diode Avl RFQ 783167 Fluke Corporation light emitting diode Avl RFQ 653-600008-001 Modcomp Inc light emitting diode Avl RFQ 539480-3 Raytheon Aircraft light emitting diode Avl RFQ 171-9006 Continental Electronics Corporation light emitting diode Avl RFQ 12830574 Picatinny Arsenal light emitting diode Avl RFQ 112-0004-001 Thermo Electric Co light emitting diode Avl RFQ 101000300 Data Device Corporation light emitting diode Avl RFQ 1001835-02 Raytheon Technical Services Company light emitting diode Avl RFQ 1001835-02 Thales Training And Simulation Inc light emitting diode Avl RFQ 0152-0002 Fluke Corporation light emitting diode Avl RFQ
Characteristics Data of NSN 5980002751967MRC Criteria Characteristic ABBH INCLOSURE MATERIAL PLASTIC ABHP OVERALL LENGTH 0.345 INCHES MAXIMUM ABJT TERMINAL LENGTH 0.650 INCHES MINIMUM ADAV OVERALL DIAMETER 0.235 INCHES MAXIMUM AEXK LENS TRANSPARENCY TRANSLUCENT ALAS INTERNAL CONFIGURATION POINT CONTACT ASCQ INTERNAL JUNCTION CONFIGURATION PN AXGY MOUNTING METHOD TERMINAL CTMZ SEMICONDUCTOR MATERIAL GALLIUM ARSENIDE PHOSPHIDE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 3.0 MAXIMUM REVERSE VOLTAGE, DC CTQX CURRENT RATING PER CHARACTERISTIC 40.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET CTRD POWER RATING PER CHARACTERISTIC 25.0 MICROWATTS LARGE-SIGNAL OUTPUT POWER, COMMON-COLLECTOR MAXIMUM CTRX COLOR TONE PRODUCED PER SOURCE RED LENS CTSB LUMINOUS INTENSITY 2.0 MILLICANDELA NOMINAL TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 0.345 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.650 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.235 INCHES MAXIMUM |
AEXK | LENS TRANSPARENCY | TRANSLUCENT |
ALAS | INTERNAL CONFIGURATION | POINT CONTACT |
ASCQ | INTERNAL JUNCTION CONFIGURATION | PN |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE PHOSPHIDE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 3.0 MAXIMUM REVERSE VOLTAGE, DC |
CTQX | CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET |
CTRD | POWER RATING PER CHARACTERISTIC | 25.0 MICROWATTS LARGE-SIGNAL OUTPUT POWER, COMMON-COLLECTOR MAXIMUM |
CTRX | COLOR TONE PRODUCED PER SOURCE | RED LENS |
CTSB | LUMINOUS INTENSITY | 2.0 MILLICANDELA NOMINAL |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |