ATV2500BQL-30DM 883 by Atmel Corporation with NSN 5962-01-501-6907 - Submit a Quote

Part Number:  ATV2500BQL-30DM 883
Alternate P/N:  ATV2500BQL30DM883
Manufacturer:  atmel corporation
Item Name :  microcircuit memory
CAGE Code:  1FN41
INC Code:  41015

ASAP Aviation Procurement is pleased to announce that part number ATV2500BQL-30DM 883 of NSN 5962-01-501-6907 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number ATV2500BQL-30DM 883 is a Microcircuit Memory manufactured by Atmel Corporation under CAGE Code 1FN41. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote. In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea). 

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

NSN Information for Part Number ATV2500BQL-30DM 883 with NSN 5962-01-501-6907, 5962015016907

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-501-6907

Item PartTypeName:

MICROCIRCUIT,MEMORY

59620150169070NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
ATV2500BQL-30DM/883515

Characteristics Data of NSN 5962-01-501-6907, 5962015016907

MRCCriteriaCharacteristic
AEHXMAXIMUM POWER DISSIPATION RATING1.2 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND MONOLITHIC AND COMPATIBLE CMOS AND ERASABLE AND PROGRAMMABLE
CQSJINCLOSURE MATERIALCERAMIC AND GLASS
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CXCYPART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUIT, MEMORY, DIGITAL, CMOS, UV ERASEABLE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT
CZEQTIME RATING PER CHACTERISTIC30.00 NANOSECONDS AF OUTPUT MEGAWATTS
CZERMEMORY DEVICE TYPEPAL
FEATSPECIAL FEATURESGENERIC P/N V2500BQL/LID SHALL BE TRANSPARENT TP PERMIT ULTRAVIOLET LIGHT ERASURE
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
TTQYTERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT

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