U18-0032 by Microsemi Corporation with NSN 5961013014830 - Submit a Quote
Part No. : U18-0032 | Alternate P/N: U180032 | Manufacturer : Microsemi Corporation | NSN : 5961-01-301-4830 |
Item Name : Semiconductor Device Set | CAGE Code : 50101 | FSC : 5961 Semiconductor Devices and Associated Hardware |
ASAP Aviation Procurement is pleased to announce that part number U18-0032 of NSN 5961013014830 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number U18-0032 is a semiconductor device set manufactured by microsemi corporation under CAGE Code 50101. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote.In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
We will be using your response to these fields to calculate your quote. Within 15 minutes of receiving your RFQ, a member of our sales team will contact you with your quote. ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is a leading distributor of new and obsolete NSN parts for the aerospace, civil aviation, and defense industries. With our inventory of more than 2 billion parts sourced from over 5000 manufacturers from around the world, we do our level best to become your go-to one-stop shop. And to help us offer you the best streamlined parts procurement experience, we have advanced shipping facilities across USA. U18-0032 microsemi corporation is in stock.
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NSN Information for Part Number U18-0032 with NSN 5961-01-301-4830, 5961013014830
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-301-4830 Item Description: Semiconductor Device Set | 5961 | 013014830 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | ||||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
U18-0032 | 5 | 2 | 5 |
Characteristics Data of NSN 5961-01-301-4830, 5961013014830MRC Criteria Characteristic ABBH INCLOSURE MATERIAL GLASS ALL SEMICONDUCTOR DEVICE DIODE ABHP OVERALL LENGTH 0.175 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE ABJT TERMINAL LENGTH 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE ADAV OVERALL DIAMETER 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE ALAZ JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION DO-35 ALL SEMICONDUCTOR DEVICE DIODE ASDD COMPONENT FUNCTION RELATIONSHIP MATCHED ASKA COMPONENT NAME AND QUANTITY 12 SEMICONDUCTOR DEVICE DIODE AXGY MOUNTING METHOD TERMINAL ALL SEMICONDUCTOR DEVICE DIODE CBBL FEATURES PROVIDED BURN IN AND HERMETICALLY SEALED CASE CTMZ SEMICONDUCTOR MATERIAL SILICON ALL SEMICONDUCTOR DEVICE DIODE CTQN VOLTAGE RATING IN VOLTS PER CHARACTERISTIC 28.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE CTQX CURRENT RATING PER CHARACTERISTIC 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE CTRD POWER RATING PER CHARACTERISTIC 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE TTQY TERMINAL TYPE AND QUANTITY 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE CTRG CAPACITANCE RATING IN PICOFARADS 5.0 MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AFZC FUNCTION FOR WHICH DESIGNED VOLTAGE VARIABLE CAPACITOR CTSG MAXIMUM OPERATING TEMP PER MEASUREMENT POINT 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
ABHP | OVERALL LENGTH | 0.175 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ADAV | OVERALL DIAMETER | 0.075 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 ALL SEMICONDUCTOR DEVICE DIODE |
ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
ASKA | COMPONENT NAME AND QUANTITY | 12 SEMICONDUCTOR DEVICE DIODE |
AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
CBBL | FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 28.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS ALL SEMICONDUCTOR DEVICE DIODE |
CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES SOURCE CUTOFF CURRENT PRESET ALL SEMICONDUCTOR DEVICE DIODE |
CTRD | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE ALL SEMICONDUCTOR DEVICE DIODE |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
CTRG | CAPACITANCE RATING IN PICOFARADS | 5.0 MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
AFZC | FUNCTION FOR WHICH DESIGNED | VOLTAGE VARIABLE CAPACITOR |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
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