ST 2 by Naval Material Headquarters Rmn with NSN 5961-00-890-5614 - Submit a Quote

ASAP Aviation Procurement is pleased to announce that part number ST 2 of NSN 5961-00-890-5614 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number ST 2 is a Semiconductor Device Diode manufactured by Naval Material Headquarters Rmn under CAGE Code Y9992. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote. In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea). 

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Disclaimer: This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/customer-terms-and-conditions/. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without 6RE77 is void.

NSN Information for Part Number ST 2 with NSN 5961-00-890-5614, 5961008905614

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-00-890-5614

Item PartTypeName:

SEMICONDUCTOR DEVICE,DIODE

59610089056140NB
CIICHCCESDPMICCriticalityENAC
UBU
Part NumberISCRNVCRNCCHCCMSDSSADC
ST2A295

Characteristics Data of NSN 5961-00-890-5614, 5961008905614

MRCCriteriaCharacteristic
AXGYMOUNTING METHODTERMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
ABHPOVERALL LENGTH0.460 INCHES NOMINAL
ABJTTERMINAL LENGTH1.250 INCHES NOMINAL
ADAVOVERALL DIAMETER0.080 INCHES NOMINAL
MATTMATERIALSILICON SEMICONDUCTOR

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