NSN 5962-01-321-1951 of Microcircuit Memory - Parts Details
| Alternative NSN: 5962013211951 |
| Item Name: Microcircuit Memory |
| FSG: 59 Electrical and Electronic Equipment Components |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013211951 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc |
ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is the latest parts procurement platform for the aerospace and aviation industry. Check out high demanding part numbers AM9112DMB, AM9112DDCB under NSN 5962-01-321-1951 of Microcircuit Memory manufactured by Advanced Micro Devices Inc.
Federal Supply Class of NSN 5962-01-321-1951 is FSC 5962 contains part details of Microcircuits Electronic. Quote for your desired part numbers.
Part Number's List for NSN 5962-01-321-1951, 5962013211951
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Part No Manufacturer Item Name QTY RFQ AM9112DMB Advanced Micro Devices Inc microcircuit memory Avl RFQ AM9112DDCB Advanced Micro Devices Inc microcircuit memory Avl RFQ
Characteristics Data of NSN 5962013211951MRC Criteria Characteristic ADAQ BODY LENGTH 0.840 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION WSD: ARLEIGH BURKE CLASS DDG; TICONDEROGA CLASS CG (47); TARAWA CLASS LHA; CLOSE IN WEAPON SYSTEM (CIWS-PHALANX); EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; FORRESTAL CLASS CV; 2M/ATE MICROMINIATURE AUTOMATIC TEST EQUIPMENT CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND MONOLITHIC CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 14 INPUT CRTL CRITICALITY CODE JUSTIFICATION FEAT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZZZ MEMORY CAPACITY UNKNOWN FEAT SPECIAL FEATURES WEAPON SYSTEM ESSENTIAL TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-2 MIL-M-38510 CZER MEMORY DEVICE TYPE RAM
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | WSD: ARLEIGH BURKE CLASS DDG; TICONDEROGA CLASS CG (47); TARAWA CLASS LHA; CLOSE IN WEAPON SYSTEM (CIWS-PHALANX); EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; FORRESTAL CLASS CV; 2M/ATE MICROMINIATURE AUTOMATIC TEST EQUIPMENT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CZER | MEMORY DEVICE TYPE | RAM |