AM9112DDCB by Advanced Micro Devices Inc with NSN 5962013211951 - Submit a Quote
| Part No. : AM9112DDCB | Manufacturer : Advanced Micro Devices Inc | NSN : 5962-01-321-1951 |
| Item Name : Microcircuit Memory | CAGE Code : 34335 | FSC : 5962 Microcircuits Electronic |
ASAP Aviation Procurement is pleased to announce that part number AM9112DDCB of NSN 5962013211951 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number AM9112DDCB is a microcircuit memory manufactured by advanced micro devices inc under CAGE Code 34335. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote.In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
We will be using your response to these fields to calculate your quote. Within 15 minutes of receiving your RFQ, a member of our sales team will contact you with your quote. ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is a leading distributor of new and obsolete NSN parts for the aerospace, civil aviation, and defense industries. With our inventory of more than 2 billion parts sourced from over 5000 manufacturers from around the world, we do our level best to become your go-to one-stop shop. And to help us offer you the best streamlined parts procurement experience, we have advanced shipping facilities across USA. AM9112DDCB advanced micro devices inc is in stock.
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NSN Information for Part Number AM9112DDCB with NSN 5962-01-321-1951, 5962013211951
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-321-1951 Item Description: Microcircuit Memory | 5962 | 013211951 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Am9112ddcb | 1 | 8 | E |
Characteristics Data of NSN 5962-01-321-1951, 5962013211951MRC Criteria Characteristic ADAQ BODY LENGTH 0.840 INCHES MAXIMUM ADAT BODY WIDTH 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM ADAU BODY HEIGHT 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS AGAV END ITEM IDENTIFICATION WSD: ARLEIGH BURKE CLASS DDG; TICONDEROGA CLASS CG (47); TARAWA CLASS LHA; CLOSE IN WEAPON SYSTEM (CIWS-PHALANX); EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; FORRESTAL CLASS CV; 2M/ATE MICROMINIATURE AUTOMATIC TEST EQUIPMENT CBBL FEATURES PROVIDED HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND MONOLITHIC CQSJ INCLOSURE MATERIAL CERAMIC CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE CQWX OUTPUT LOGIC FORM N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC CQZP INPUT CIRCUIT PATTERN 14 INPUT CRTL CRITICALITY CODE JUSTIFICATION FEAT CWSG TERMINAL SURFACE TREATMENT SOLDER CZEN VOLTAGE RATING AND TYPE PER CHARACTERISTIC -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE CZEQ TIME RATING PER CHACTERISTIC 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT CZZZ MEMORY CAPACITY UNKNOWN FEAT SPECIAL FEATURES WEAPON SYSTEM ESSENTIAL TEST TEST DATA DOCUMENT 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). TTQY TERMINAL TYPE AND QUANTITY 16 PRINTED CIRCUIT AEHX MAXIMUM POWER DISSIPATION RATING 1.0 WATTS AFJQ STORAGE TEMP RANGE -65.0/+150.0 DEG CELSIUS CTFT CASE OUTLINE SOURCE AND DESIGNATOR D-2 MIL-M-38510 CZER MEMORY DEVICE TYPE RAM
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | WSD: ARLEIGH BURKE CLASS DDG; TICONDEROGA CLASS CG (47); TARAWA CLASS LHA; CLOSE IN WEAPON SYSTEM (CIWS-PHALANX); EMORY S. LAND CLASS AS; NIMITZ CLASS CVN; FORRESTAL CLASS CV; 2M/ATE MICROMINIATURE AUTOMATIC TEST EQUIPMENT |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND W/ENABLE AND MONOLITHIC |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CZER | MEMORY DEVICE TYPE | RAM |
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