IDT71256L55TDB by Integrated Device Technology Inc with NSN 5962015561877 - Submit a Quote
| Part No. : IDT71256L55TDB | Manufacturer : Integrated Device Technology Inc | NSN : 5962-01-556-1877 |
| Item Name : Microcircuit Memory | CAGE Code : 0SP21 | FSC : 5962 Microcircuits Electronic |
ASAP Aviation Procurement is pleased to announce that part number IDT71256L55TDB of NSN 5962015561877 is now available and in stock. We can get you one of the fastest and most competitive quotes on this part. Part number IDT71256L55TDB is a microcircuit memory manufactured by integrated device technology inc under CAGE Code 0SP21. Simply fill out the Request for Quote (RFQ) form provided here to get started on your quote.In order to make sure that we get you your quote in a timely manner, please take the time to make sure that all fields are completely filled out, particularly the asterisk-marked (*) fields like Parts Needed By and Quantity (ea).
We will be using your response to these fields to calculate your quote. Within 15 minutes of receiving your RFQ, a member of our sales team will contact you with your quote. ASAP Aviation Procurement, owned and operated by ASAP Semiconductor, is a leading distributor of new and obsolete NSN parts for the aerospace, civil aviation, and defense industries. With our inventory of more than 2 billion parts sourced from over 5000 manufacturers from around the world, we do our level best to become your go-to one-stop shop. And to help us offer you the best streamlined parts procurement experience, we have advanced shipping facilities across USA. IDT71256L55TDB integrated device technology inc is in stock.
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NSN Information for Part Number IDT71256L55TDB with NSN 5962-01-556-1877, 5962015561877
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-556-1877 Item Description: MICROCIRCUIT,MEMORY | 5962 | 015561877 | N | |||
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| IDT71256L55TDB | 5 | 2 | 3 |
Characteristics Data of NSN 5962-01-556-1877, 5962015561877MRC Criteria Characteristic AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" CBBL FEATURES PROVIDED HIGH SPEED" CQSJ INCLOSURE MATERIAL CERAMIC" CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN 28 INPUT" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY CMOS STATIC RAM 256K" CZEQ TIME RATING PER CHACTERISTIC 55.00 NANOSECONDS MAXIMUM ACCESS" CZER MEMORY DEVICE TYPE RAM" CZZZ MEMORY CAPACITY 32K X 8" FEAT SPECIAL FEATURES MIL-STD-883, CLASS B COMPLIANT; LOW POWER" TTQY TERMINAL TYPE AND QUANTITY 28 PIN" AFGA OPERATING TEMP RANGE -55.0/+125.0 DEG CELSIUS" CBBL FEATURES PROVIDED HIGH SPEED" CQSJ INCLOSURE MATERIAL CERAMIC" CQSZ INCLOSURE CONFIGURATION DUAL-IN-LINE" CQWX OUTPUT LOGIC FORM COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" CQZP INPUT CIRCUIT PATTERN 28 INPUT" CXCY PART NAME ASSIGNED BY CONTROLLING AGENCY CMOS STATIC RAM 256K" CZEQ TIME RATING PER CHACTERISTIC 55.00 NANOSECONDS MAXIMUM ACCESS" CZER MEMORY DEVICE TYPE RAM" CZZZ MEMORY CAPACITY 32K X 8" FEAT SPECIAL FEATURES MIL-STD-883, CLASS B COMPLIANT; LOW POWER" TTQY TERMINAL TYPE AND QUANTITY 28 PIN"
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HIGH SPEED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 28 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM 256K" |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 32K X 8" |
| FEAT | SPECIAL FEATURES | MIL-STD-883, CLASS B COMPLIANT; LOW POWER" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN" |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HIGH SPEED" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 28 INPUT" |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | CMOS STATIC RAM 256K" |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM ACCESS" |
| CZER | MEMORY DEVICE TYPE | RAM" |
| CZZZ | MEMORY CAPACITY | 32K X 8" |
| FEAT | SPECIAL FEATURES | MIL-STD-883, CLASS B COMPLIANT; LOW POWER" |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PIN" |
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